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| NTJD4401N Small Signal MOSFET 20 V, Dual N-Channel, SC-88 ESD Protection Features * * * * * * * * * Small Footprint (2 x 2 mm) Low Gate Charge N-Channel Device ESD Protected Gate Same Package as SC-70 (6 Leads) Pb-Free Packages are Available Load Power switching Li-Ion Battery Supplied Devices Cell Phones, Media Players, Digital Cameras, PDAs DC-DC Conversion http://onsemi.com V(BR)DSS RDS(on) Typ 0.22 W @ 4.5 V 20 V 0.32 W @ 2.5 V 0.51 W @ 1.8 V 0.775 A ID Max Applications SC-88 (SOT-363) MAXIMUM RATINGS (TJ = 25C unless otherwise stated) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Based on RqJA) Power Dissipation (Based on RqJA) Continuous Drain Current (Based on RqJL) Power Dissipation (Based on RqJL) Pulsed Drain Current Steady State Steady State Steady State Steady State TA = 25C TA = 85C TA = 25C TA = 85C TA = 25C TA = 85C TA = 25C TA = 85C t 10 ms PD IDM TJ, TSTG IS TL ID PD Symbol VDSS VGS ID Value 20 12 0.63 0.46 0.27 0.14 0.91 0.65 0.55 0.29 1.2 -55 to 150 0.63 260 A W A W Unit V V A S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 Top View MARKING DIAGRAM & PIN ASSIGNMENT D1 G2 S2 6 TD M G G 1 S1 G1 D2 TD M G = Device Code = Date Code = Pb-Free Package Operating Junction and Storage Temperature Continuous Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8" from case for 10 s) C A C 1 SC-88/SOT-363 CASE 419B STYLE 28 THERMAL RESISTANCE RATINGS (Note 1) Parameter Junction-to-Ambient - Steady State Junction-to-Lead (Drain) - Steady State Symbol RqJA RqJL Typ 400 194 Max 460 226 Units C/W (Note: Microdot may be in either location) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 oz Cu area = 0.9523 in sq. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. (c) Semiconductor Components Industries, LLC, 2008 1 January, 2008 - Rev. 4 Publication Order Number: NTJD4401N/D NTJD4401N ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise stated) Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Gate Threshold Temperature Coefficient Drain-to-Source On Resistance VGS(TH) VGS(TH)/TJ RDS(on) VGS = 4.5 V, ID = 0.63 A VGS = 2.5 V, ID = 0.40 A Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge SWITCHING CHARACTERISTICS (Note 3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) tr td(OFF) tf VGS = 4.5 V, VDD = 10 V, ID = 0.5 A, RG = 20 W 0.083 0.227 0.786 0.506 ms CISS COSS CRSS QG(TOT) QG(TH) QGS QGD VGS = 4.5 V, VDS = 10 V, ID = 0.63 A VGS = 0 V, f = 1.0 MHz, VDS = 20 V 33 13 2.8 1.3 0.1 0.2 0.4 46 22 5.0 3.0 nC pF gFS VDS = 4.0 V, ID = 0.63 A VGS = VDS, ID = 250 mA 0.6 0.92 -2.1 0.29 0.36 2.0 0.375 0.445 S 1.5 V mV/ C W V(BR)DSS V(BR)DSS/TJ IDSS IGSS VGS = 0 V, VDS = 16 V VDS = 0 V, VGS = 12 V VGS = 0 V, ID = 250 mA 20 27 22 1.0 10 V mV/ C mA mA Symbol Test Condition Min Typ Max Unit DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS =0.23 A TJ = 25C TJ = 125C 0.76 0.63 0.410 ms 1.1 V Reverse Recovery Time tRR VGS = 0 V, dIS/dt = 100 A/ms, IS = 0.63 A 2. Pulse Test: pulse width 300 ms, duty cycle 2%. 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTJD4401N TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) 1.4 ID, DRAIN CURRENT (AMPS) 1.2 1 0.8 0.6 0.4 1.4 V 0.2 1.2 V 0 0 0 2 4 6 8 10 0 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 1.6 V VGS = 4.5 V to 2.2 V VGS = 2 V 1.8 V 1.2 TJ = 25C ID, DRAIN CURRENT (AMPS) 1 0.8 0.6 0.4 0.2 VDS 10 V TJ = 125C 25C TJ = -55C 0.4 0.8 1.2 2 1.6 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 2.4 Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.7 0.6 0.5 0.4 TJ = 25C TJ = -55C 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.2 Figure 2. Transfer Characteristics VGS = 4.5 V VGS = 2.5 V TJ = 125C TJ = 125C TJ = 25C TJ = -55C 0.3 0.2 0.1 0 0 0.2 0.4 1 0.8 0.6 ID, DRAIN CURRENT (AMPS) 1.2 1.4 0.6 0.4 1 0.8 ID, DRAIN CURRENT (AMPS) 1.2 1.4 Figure 3. On-Resistance vs. Drain Current and Temperature 2 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.8 1.6 1.4 1.2 1 0.8 0.6 -50 0 -25 0 25 50 75 100 125 150 ID = 0.63 A VGS = 4.5 V and 2.5 V 80 Figure 4. On-Resistance vs. Drain Current and Temperature TJ = 25C VGS = 0 V C, CAPACITANCE (pF) 60 40 Ciss 20 Coss Crss 0 5 10 15 20 TJ, JUNCTION TEMPERATURE (C) DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Capacitance Variation http://onsemi.com 3 NTJD4401N TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 5 IS, SOURCE CURRENT (AMPS) QG(TOT) 4 VGS 3 QGS QGD 0.7 VGS = 0 V 0.6 0.5 0.4 0.3 0.2 0.1 0 1.4 0 0.2 0.4 0.6 TJ = 150C TJ = 25C 0.8 1 2 1 0 0 0.2 ID = 0.63 A TJ = 25C 0.4 0.6 0.8 1 Qg, TOTAL GATE CHARGE (nC) 1.2 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 7. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge Figure 8. Diode Forward Voltage vs. Current ORDERING INFORMATION Device NTJD4401NT1 NTJD4401NT1G NTJD4401NT2 NTJD4401NT2G NTJD4401NT4 NTJD4401NT4G Package SC-88 SC-88 (Pb-Free) SC-88 SC-88 (Pb-Free) SC-88 SC-88 (Pb-Free) Shipping 3000 / Tape & Reel 3000 / Tape & Reel 3000 / Tape & Reel 3000 / Tape & Reel 10,000 / Tape & Reel 10,000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 4 NTJD4401N PACKAGE DIMENSIONS SC-88/SC70-6/SOT-363 CASE 419B-02 ISSUE W D e A3 6 5 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B-01 OBSOLETE, NEW STANDARD 419B-02. MILLIMETERS DIM MIN NOM MAX A 0.80 0.95 1.10 A1 0.00 0.05 0.10 A3 0.20 REF b 0.10 0.21 0.30 C 0.10 0.14 0.25 D 1.80 2.00 2.20 E 1.15 1.25 1.35 e 0.65 BSC L 0.10 0.20 0.30 HE 2.00 2.10 2.20 STYLE 26: PIN 1. SOURCE 1 2. GATE 1 3. DRAIN 2 4. SOURCE 2 5. GATE 2 6. DRAIN 1 INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 HE 1 2 3 -E- C b 6 PL 0.2 (0.008) M L E M A A1 SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 5 NTJD4401N/D |
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